Rutherford Backscattering Spectrometry (RBS)

 

                                                

 

 

The RBS-equipment, used for the characterization of thin films of complex oxides and switchable mirrors produced in the Condensed Matter group at the VU, is an Ion Beam Analysis facility situated at the Amolf Institute in Amsterdam in the group of Prof. A. Polman.

 

Rutherford backscattering analysis is a powerful tool for the characterization of thin films.

It provides information about the composition of a sample as well as depth distributions.

By aligning the crystallographic axes of the sample to the incoming He+-beam, the so-called channelling analysis provides information about the epitaxial growth of the thin films.

 

A van de Graaff accelerator produces 2 MeV He+ ions, which are focused on the thin film to be analysed.

A surface barrier detector under 165 degrees back reflection measures the scattered ions coming from the sample.

By means of a multi channel analyser the signal height, which is proportional to the energy, is converted into 512 channels ranging from 0 to 2MeV.

In each channel those events are collected which have a specific energy of the recoiled He+ ions.

 

A typical spectrum is shown in which a Palladium film is deposited on a sapphire substrate:

 

                 

The Pd peak is well separated from the substrate signal, which is due to the  higher mass (m2) of  Pd compared to Al or O.  The He particles (m1) are scattered with a much higher recoil energy than the He from the substrate in this elastic scattering process. This enables a simple peak integration of the Pd peak for an accurate calculation of the number of Pd atoms in the film.

 

 

 

                                               

                                           

 

When the elements of the substrate (SrTiO3)  have a mass comparable to the masses of the film (PrCuO) grown on top, an overlap may occur as can be seen in the graph above. Now the peak integration is no longer possible. For the calculation of compositions the RUMP program provides a simulation, which gives an overall accuracy of 3 %.

 

 

 

                                             

 

The RUMP program can also simulate multi-layers and interface reactions such as in-diffusion of complicate multiplayer structures like the above picture presents

 

 

Literature:

 

J.H. Rector, P. Koster, F. Peerdeman, D.G. de Groot, B. Dam.

          Twinfree YBa2Cu3O7-d  films on (001) NdGaO3 showing isotropic electrical

          Behavior.

           J. Alloys and Compounds 251 (1997) 114-117